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Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure
Zhi-Yuan, Gao, Yue, Hao, Jin-Cheng, Zhang, Pei-Xian, Li, Wen-Ping, GuVolume:
18
Langue:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/18/11/059
Date:
November, 2009
Fichier:
PDF, 531 KB
english, 2009