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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs
Jiang, Xiang-Wei, Li, Shu-ShenVolume:
21
Langue:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/21/2/027304
Date:
February, 2012
Fichier:
PDF, 307 KB
english, 2012