SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients
Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Can, Nuri, Okur, Serdal, Monavarian, Morteza, Zhang, Fan, Avrutin, Vitaliy, Morkoç, Hadis, Teke, Ali, Özgür, ÜmitVolume:
9363
Année:
2015
Langue:
english
DOI:
10.1117/12.2179637
Fichier:
PDF, 328 KB
english, 2015