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High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques
R. Darwich, P. Roca i CabarrocasVolume:
519
Année:
2011
Langue:
english
Pages:
7
DOI:
10.1016/j.tsf.2011.02.038
Fichier:
PDF, 1022 KB
english, 2011