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Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs – A Combined DCIV/SDR Study
Aichinger, Thomas, Lenahan, Patrick M., Peters, DethardVolume:
740-742
Langue:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.529
Date:
January, 2013
Fichier:
PDF, 664 KB
english, 2013