Electrical properties of metal–ferroelectric–insulator–semiconductor structure using BaxSr1−xTiO3 for ferroelectric–gate field effect transistor
Ala’eddin A. Saif, P. PoopalanVolume:
62
Année:
2011
Langue:
english
Pages:
6
DOI:
10.1016/j.sse.2011.03.004
Fichier:
PDF, 699 KB
english, 2011