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Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes
Eun-Ae Chung, Young-Pil Kim, Kab-Jin Nam, Sungsam Lee, Ji-Young Min, Yu-Gyun Shin, Siyoung Choi, Gyoyoung Jin, Joo-Tae Moon, Sangsig KimVolume:
56
Année:
2011
Langue:
english
Pages:
4
DOI:
10.1016/j.sse.2010.10.004
Fichier:
PDF, 410 KB
english, 2011