Physical and Electrical Properties of W/WN[sub x]/Poly-Si[sub 1−x]Ge[sub x] (x=0, 0.2, 0.6) Gates Stack with Post-thermal Process
Kang, S.-K., Min, B. G., Kim, J. J., Ko, D.-H., Kang, H. B., Yang, C. W., Lim, K. Y., Ahn, T. H.Volume:
151
Année:
2004
Langue:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1632480
Fichier:
PDF, 205 KB
english, 2004
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