Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
Khromov, S., Hemmingsson, C., Monemar, B., Hultman, L., Pozina, G.Volume:
116
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4903819
Date:
December, 2014
Fichier:
PDF, 2.25 MB
english, 2014