Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Hu, Guang-Xi, Liu, Ran, Qiu, Zhi-Jun, Wang, Ling-Li, Tang, Ting-AoVolume:
49
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.034001
Date:
March, 2010
Fichier:
PDF, 219 KB
english, 2010