GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm 2 /(V s) Channel Mobility
Otake, Hirotaka, Egami, Shin, Ohta, Hiroaki, Nanishi, Yasushi, Takasu, HidemiVolume:
46
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.L599
Date:
June, 2007
Fichier:
PDF, 105 KB
english, 2007