A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates
Maya Marinova, Frederic Mercier, Alkioni Mantzari, Irina Galben, Didier Chaussende, Efstathios K. PolychroniadisVolume:
404
Année:
2009
Langue:
english
Pages:
3
DOI:
10.1016/j.physb.2009.08.190
Fichier:
PDF, 299 KB
english, 2009