
The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells
Li Shuti, Fan Guanghan, Zhou Tianming, Wang Hao, Sun Huiqing, Zheng Shuwen, Guo Zhiyou, Tan ChunhuaVolume:
349
Année:
2004
Langue:
english
Pages:
4
DOI:
10.1016/j.physb.2004.03.090
Fichier:
PDF, 199 KB
english, 2004