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Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
Weeks, T. Warren, Bremser, Michael D., Ailey, K. Shawn, Carlson, Eric, Perry, William G., Piner, Edwin L., El-Masry, Nadia A., Davis, Robert F.Volume:
11
Langue:
english
Journal:
Journal of Materials Research
DOI:
10.1557/JMR.1996.0126
Date:
April, 1996
Fichier:
PDF, 400 KB
english, 1996