Investigations on In[sub 0.45]Al[sub 0.55]As∕In[sub x]Ga[sub 1−x]As Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiN[sub x] Passivation
Lee, Ching-Sung, Hsu, Wei-Chou, Ho, Chiu-Sheng, Kao, An-YungVolume:
156
Année:
2009
Langue:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3098480
Fichier:
PDF, 425 KB
english, 2009