Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
Elfiky, Dalia, Yamaguchi, Masafumi, Sasaki, Takuo, Takamoto, Tatsuya, Morioka, Chiharu, Imaizumi, Mitsuru, Ohshima, Takeshi, Sato, Shin-ichiro, Elnawawy, Mohamed, Eldesuky, Tarek, Ghitas, AhmedVolume:
49
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.121202
Date:
December, 2010
Fichier:
PDF, 745 KB
english, 2010