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[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Parasitic Electrostatic Capacitances in Si/SiGe n-HFET
Enciso-Aguilar, Mauro, Zerounian, Nicolas, Hackbarth, Thomas, Herzog, Hans, Aniel, FredericVolume:
3
Année:
2006
Langue:
english
DOI:
10.1149/1.2355893
Fichier:
PDF, 278 KB
english, 2006