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Effects of Nitride-Based Plasma Pretreatment Prior to SiN x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates
Kim, Ji Ha, Choi, Hong Goo, Ha, Min-Woo, Song, Hong Joo, Roh, Cheong Hyun, Lee, Jun Ho, Park, Jung Ho, Hahn, Cheol-KooVolume:
49
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.04DF05
Date:
April, 2010
Fichier:
PDF, 189 KB
english, 2010