Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
Dudley, Michael, Zhang, Ning, Zhang, Yu, Raghothamachar, Balaji, Byrappa, Shayan, Choi, Gloria, Sanchez, Edward K., Hansen, D.M., Drachev, Roman, Loboda, Mark J.Volume:
645-648
Langue:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.645-648.291
Date:
April, 2010
Fichier:
PDF, 5.39 MB
english, 2010
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