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Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga-Al liquid-phase epitaxy
Adachi, Masayoshi, Takasugi, Mari, Sugiyama, Masashi, Iida, Junji, Tanaka, Akikazu, Fukuyama, HiroyukiVolume:
252
Langue:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201451426
Date:
April, 2015
Fichier:
PDF, 652 KB
english, 2015