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Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1−xN MOCVD on SiC substrates
Jeremy D. Acord, Xiaojun Weng, Elizabeth C. Dickey, David W. Snyder, Joan M. RedwingVolume:
310
Année:
2008
Langue:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2007.11.153
Fichier:
PDF, 538 KB
english, 2008