Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella, T.D. MoustakasVolume:
278
Année:
2005
Langue:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2005.01.042
Fichier:
PDF, 257 KB
english, 2005