Fast determination of the effective channel length and the gate Oxide thickness in polycrystalline Silicon MOSFET's
Korma, E.J., Visser, K., Snijder, J., Verwey, J.F.Volume:
5
Langue:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1984.25949
Date:
September, 1984
Fichier:
PDF, 299 KB
english, 1984