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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - A 0.25 μm CMOS technology with 45 Å NO-nitrided oxide
Luo, M.S.C., Tsui, P.V.G., Wei-Ming Chen,, Gilbert, P.V., Maiti, B., Sitaram, A.R., Shih-Wei Sun,Année:
1995
Langue:
english
DOI:
10.1109/iedm.1995.499313
Fichier:
PDF, 327 KB
english, 1995