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[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Analysis of degradation induced by silicon nitride InP/InGaAs heterojunction bipolar transistors
Sachelarie, DanAnnée:
2009
Langue:
english
DOI:
10.1109/irps.2009.5173338
Fichier:
PDF, 292 KB
english, 2009