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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps
Nagumo, Toshiharu, Takeuchi, Kiyoshi, Hase, Takashi, Hayashi, YoshihiroAnnée:
2010
Langue:
english
DOI:
10.1109/iedm.2010.5703437
Fichier:
PDF, 405 KB
english, 2010