[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Correlation between gate oxide reliability and the profile of the trench top corner in Shallow Trench Isolation (STI)
Tai-Su Park,, Yu Gyun Shin,, Han Sin Lee,, Moon Han Park,, Sang Dong Kwon,, Ho Kyu Kang,, Young Bum Koh,, Moon Yong Lee,Année:
1996
Langue:
english
DOI:
10.1109/iedm.1996.554088
Fichier:
PDF, 470 KB
english, 1996