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[IEEE 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM) - Guangzhou, China (2010.12.3-2010.12.6)] Advances in Optoelectronics and Micro/nano-optics - Dislocation and temperature effects on zero-bias resistance-area product of InGaSb PIN photodiodes
Tanzid, Mehbuba, Mohammedy, Farseem M.Année:
2010
Langue:
english
DOI:
10.1109/aom.2010.5713509
Fichier:
PDF, 342 KB
english, 2010