
[IEEE [1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - Nara, Japan (May 14-15, 1993)] [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - A Simple Hot Electron Transport Model And Its Prediction Of Si-SiO/sub 2/ Injection Probability
Gyo-young Jin,, Young-june Park,, Hong-shick Min,Année:
1993
Langue:
english
DOI:
10.1109/vpad.1993.724771
Fichier:
PDF, 204 KB
english, 1993