Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
Maximenko, S. I., Freitas, J. A., Myers-Ward, R. L., Lew, K.-K., VanMil, B. L., Eddy, C. R., Gaskill, D. K., Muzykov, P. G., Sudarshan, T. S.Volume:
108
Année:
2010
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3448230
Fichier:
PDF, 1.09 MB
english, 2010