[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Design and process integration for high-density, high-speed, and low-power 6F/sup 2/ cross point MRAM cell
Asao, Y., Kajiyama, T., Fukuzumi, Y., Amano, M., Aikawa, H., Ueda, T., Kishi, T., Ikegawa, S., Tsuchida, K., Iwata, Y., Nitayama, A., Shimura, K., Kato, Y., Miura, S., Ishiwata, N., Hada, H., Tabara,Année:
2004
Langue:
english
DOI:
10.1109/iedm.2004.1419224
Fichier:
PDF, 232 KB
english, 2004
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