[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
Hoong-Shing Wong,, Kah-Wee Ang,, Lap Chan,, Keat-Mun Hoe,, Chih-Hang Tung,, Balasubramaniam, N., Weeks, Doran, Landin, Trevan, Spear, Jennifer, Thomas, Shawn G., Samudra, Ganesh, Yee-Chia Yeo,Année:
2007
Langue:
english
DOI:
10.1109/isdrs.2007.4422419
Fichier:
PDF, 334 KB
english, 2007