Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth
Zhu, Tongtong, Sutherland, Danny, Badcock, Tom J., Hao, Rui, Moram, Michelle A., Dawson, Philip, Kappers, Menno J., Oliver, Rachel A.Volume:
52
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.08JB01
Date:
August, 2013
Fichier:
PDF, 844 KB
english, 2013