High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
Feng, Jia, Thareja, Gaurav, Kobayashi, Masaharu, Chen, Shulu, Poon, Andrew, Bai, Yun, Griffin, Peter B., Wong, Simon S., Nishi, Yoshio, Plummer, James D.Volume:
29
Langue:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2000613
Date:
July, 2008
Fichier:
PDF, 475 KB
english, 2008
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