Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1988 / 11 Vol. 6; Iss. 6
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Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system
Rosler, Richard S.Volume:
6
Langue:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.584167
Date:
November, 1988
Fichier:
PDF, 954 KB
english, 1988