[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - A new SJ VDMOS with an extended HK dielectric-filling trench
Wang, Qi, Wang, Pei, Jiang, Yong-Heng, Zhou, Kun, Yao, Guo-Liang, Luo, Xiao-RongAnnée:
2012
Langue:
english
DOI:
10.1109/icsict.2012.6467703
Fichier:
PDF, 306 KB
english, 2012