
Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning
Tsukamoto, Nobuo, Yazawa, Yoshiaki, Asano, Junko, Minemura, TetsurohVolume:
61
Année:
1992
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.107752
Fichier:
PDF, 527 KB
english, 1992