
[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - A novel double-gate Trench Insulated Gate Bipolar transistor with ultra-low on-state voltage
Wesley Chih-Wei Hsu,, Udrea, Florin, Ho-Tai Chen,, Wei-Chieh Lin,Année:
2009
Langue:
english
DOI:
10.1109/ispsd.2009.5158059
Fichier:
PDF, 662 KB
english, 2009