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Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
Wierzbowska, MałgorzataVolume:
112
Année:
2012
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4734000
Fichier:
PDF, 681 KB
english, 2012