Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere
Fukata, Naoki, Suezawa, MasashiVolume:
87
Année:
2000
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.373548
Fichier:
PDF, 368 KB
english, 2000