Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor
Lim, Han Jin, Kim, Youngkuk, Sang Jeon, In, Yeo, Jaehyun, Im, Badro, Hong, Soojin, Kim, Bong-Hyun, Nam, Seok-Woo, Kang, Ho-kyu, Jung, E. S.Volume:
102
Année:
2013
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4811274
Fichier:
PDF, 1.07 MB
english, 2013