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Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure
Hayakawa, Ryoma, Nakae, Mari, Yoshimura, Takeshi, Ashida, Atsushi, Fujimura, Norifumi, Uehara, Tsuyoshi, Tagawa, Masatoshi, Teraoka, YudenVolume:
100
Année:
2006
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2353781
Fichier:
PDF, 924 KB
english, 2006