Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1993 / 5 Vol. 11; Iss. 3
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Migration-enhanced epitaxial growth of GaAs on Si using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers
Sudersena Rao, T.Volume:
11
Langue:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.586754
Date:
May, 1993
Fichier:
PDF, 768 KB
english, 1993