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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions
Wang, Qingpeng, Jiang, Ying, Li, Liuan, Wang, Dejun, Ohno, Yasuo, Ao, Jin-PingVolume:
61
Langue:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2296094
Date:
February, 2014
Fichier:
PDF, 1.78 MB
english, 2014