
Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
Rodrı́guez, Salvador, Gámiz, F., Palma, A., Cartujo, P., Carceller, J. E.Volume:
88
Année:
2000
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1304839
Fichier:
PDF, 345 KB
english, 2000