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Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers
Lai, Jiun-Tsuen, Lee, Joseph Ya-minVolume:
76
Année:
1994
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.357657
Fichier:
PDF, 585 KB
english, 1994