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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba,Sr)TiO/sub 3/ thin films on a thick storage node of Ru
Yuuki, A., Yamamuka, M., Makita, T., Horikawa, T., Shibano, T., Hirano, N., Maeda, H., Mikami, N., Ono, K., Ogata, H., Abe, H.Année:
1995
Langue:
english
DOI:
10.1109/iedm.1995.497195
Fichier:
PDF, 633 KB
english, 1995