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InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric
Xue, Fei, Zhao, Han, Chen, Yen-Ting, Wang, Yanzhen, Zhou, Fei, Lee, Jack C.Volume:
98
Année:
2011
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3559609
Fichier:
PDF, 616 KB
english, 2011