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[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - A New Low-cost Technique for Mobility Enhancement of PMOSFETs Strained by Ge Pre-amorphization Implantation for Source/Drain Extension
Qiuxia Xu,, Xiaofong Duan,, He Qian,, Haihua Liu,, Ming Liu,Année:
2005
Langue:
english
DOI:
10.1109/isdrs.2005.1596157
Fichier:
PDF, 180 KB
english, 2005