Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method
Hiroaki Arimura, Shinya Horie, Yudai Oku, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji WatanabeVolume:
254
Année:
2008
Langue:
english
Pages:
4
DOI:
10.1016/j.apsusc.2008.02.133
Fichier:
PDF, 431 KB
english, 2008